Infineon Applied sciences AG (FSE: IFX / OTCQX: IFNNY) has lately unveiled important developments in its 1200 V and 2000 V CoolSiC MOSFET module households. This leap ahead is encapsulated in a newly standardized bundle, that includes the 62mm system in a half-bridge topology. The core of this innovation lies within the M1H silicon carbide (SiC) MOSFET expertise, providing a breakthrough in mid-power functions ranging as much as 250 kW.
Enhanced Energy Density and Utility Scope
The mixing of the M1H expertise facilitates an prolonged gate voltage window, which interprets to heightened robustness in opposition to voltage spikes. This function is especially helpful at excessive switching frequencies. The MOSFET’s design, optimized for minimal switching and transmission losses, considerably reduces the necessity for cooling. These traits, mixed with a excessive reverse voltage functionality, align with the stringent calls for of latest system design.
Purposes beforehand constrained by silicon’s energy density limitations in IGBT expertise, comparable to photo voltaic power programs, server energy provides, power storage options, EV chargers, traction programs, industrial induction cooking, and energy conversion programs, stand to learn immensely from this technological improve.
Optimization in Converter Design and System Effectivity
Using Infineon’s CoolSiC chip expertise, converter designs can now obtain enhanced effectivity. This not solely permits for a rise in nominal energy per inverter but in addition paves the best way for a discount in total system prices. The brand new modules symbolize a strategic shift in the direction of extra environment friendly, sturdy, and cost-effective energy administration options in numerous industries.
Strong Design and Reliability
The newly designed bundle, that includes baseplate and screw connections, exemplifies mechanical robustness, tailor-made for maximal system availability. This design minimizes service prices and potential downtime losses. The excessive thermal biking functionality and the power to function repeatedly at temperatures as much as 150°C guarantee exceptional reliability. Moreover, the symmetrical inside design of the bundle ensures uniform switching situations, thereby enhancing efficiency consistency.
Additional enhancements in thermal efficiency will be achieved by the optionally available use of pre-applied thermal interface materials (TIM).
Product Availability and Specs
The 1200 V variants of the CoolSiC 62mm bundle MOSFETs are presently out there in 5 mΩ/180 A, 2 mΩ/420 A, and 1 mΩ/560 A configurations. The 2000 V portfolio is about to incorporate 4 mΩ/300 A and three mΩ/400 A variants. The whole vary, together with the 1200 V/3 mΩ and 2000 V/5 mΩ variants, is anticipated to be out there in Q1 2024. An analysis board has been launched for speedy characterization of those modules, providing flexibility within the adjustment of gate voltage and gate resistors for environment friendly testing.
