Indian researchers have proposed to construct tandem photo voltaic cells based mostly on a CIGS prime cell and a backside cell counting on a single-walled carbon nanotube (SWCNT) absorber. SWCNTs have been beforehand utilized in photo voltaic analysis as an alternative choice to standard metallic grid contacts or gap transport layers (HTLs), as they mix optoelectronic properties, flexibility, chemical stability, and easy switch protocols.
Scientists led by the M.M.M. College of Expertise, Gorakhpur in India have developed a tandem photo voltaic cell based mostly on a copper, indium, gallium and diselenide (CIGS) prime cell and a backside cell counting on a single-walled carbon nanotube (SWCNT) absorber.
“To the perfect of our information, that is the primary try and construct tandem photo voltaic cells based mostly on CIGS and SWCNT,” the analysis’s corresponding creator, Alok Patel, informed pv journal. “Within the prime cell, we used an ultra-thin WSeTe, which is a compound belonging to the transition metallic dichalcogenide group, as a buffer layer to cut back the absorption loss. Within the backside cell, we used a buffer layer fabricated from zirconium disulfide (ZrS2), which additionally belongs to the transition metallic dichalcogenide group.”
SWCNTs have been beforehand utilized in photo voltaic analysis as an alternative choice to standard metallic grid contacts or gap transport layers (HTLs), as they’re mentioned to mix optoelectronic properties, flexibility, chemical stability, and easy switch protocols to cowl massive floor areas.
Within the examine “Design and efficiency investigation of CIGS/SWCNT tandem photo voltaic cell for effectivity enchancment,” revealed in Optics Communication, the analysis group defined that they numerically optimized the photo voltaic cell by way of the SCAPS–1D photo voltaic cell capacitance software program, developed by the College of Ghent, to simulate the novel thin-film cell design.
The teachers designed the highest cell with a CIGS as an absorber, an electron transport layer (ETL) based mostly on WSeTe, an aluminum contact, and a window layer of zinc oxide (i-ZnO). As for the underside cell, it was deliberate to depend on the SWCNT absorber, the ZrS2 buffer layer, and a window layer of indium tin oxide (ITO). The underside cell has a bandgap of 1.24 eV and the higher system of 1.18 eV, which the scientists mentioned ensures that the underside system absorbs the upper wavelengths which are transferred from the higher cell.
The CGIS cell with a 2,000 nm thick absorber achieved a most energy conversion effectivity of 23.69%, an open-circuit voltage of 0.7437 V, a short-circuit present density of 40.25 mA/cm2, and a fill issue of 79.15%. The SWCNT system with a 2,000 nm thick absorber achieved a most energy conversion effectivity of 17.10%, an open-circuit voltage of 0.5653 V, a short-circuit present density of 40.36 mA/cm2, and a fill issue of 74.96%.
For the tandem cell, the scientists used a model of the CIGS cell with a 22.82% effectivity and a pattern of the SWCNT system with an effectivity of 16.05% effectivity, with its mixed effectivity reaching 38.91%. “This analysis work may help within the fabrication of environment friendly tandem PV cells based mostly on CIGS and SWCNT supplies,” the researchers mentioned.
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