Silfab Photo voltaic has been chosen for an innovation award by the U.S. Division of Power (DOE) to proceed its growth of back-contact N-type cells demonstrating efficiencies of a minimum of 26%.
The corporate is creating the cells on a 300 MW pilot line, which is ready to function alongside Silfab’s primary N-type cell manufacturing at its South Carolina facility. The undertaking is anticipated to allow scale-up of back-contact cell know-how into high-volume manufacturing of the corporate’s PV modules.
The DOE’s Photo voltaic Power Applied sciences Workplace (SETO) additionally chosen Silfab for a separate innovation award to additional develop excessive effectivity building-integrated PV (BIPV) modules within the type of photo voltaic spandrels, which have opaque glass meant to be suited to glazed surfaces.
“Silfab Photo voltaic is main the best way in U.S. integration of modern photo voltaic cells and modules by investing within the analysis and growth that enables us to ship essentially the most superior, highly effective and dependable PV photo voltaic for business, residential and shortly, BIPV clients,” says Paolo Maccario, Silfab president and CEO.
“The DOE awards are a testomony to Silfab’s dedication to innovation and to the energy of our engineering staff to ship vital developments in photo voltaic applied sciences.”
