STMicroelectronics has launched its newest improvements, the MasterGaN1L and MasterGaN4L, marking a major development in built-in gallium-nitride (GaN) bridge gadgets. These gadgets are pivotal in simplifying energy provide design by leveraging wide-bandgap know-how, aligning with the newest ecodesign targets.
Enhanced Options of MasterGaN Household
The MasterGaN household integrates 650V GaN excessive electron-mobility transistors (HEMTs) with optimized gate drivers and system safety. An progressive addition is an built-in bootstrap diode that assists in powering the system at startup. This integration simplifies the complicated gate-drive necessities of GaN transistors and is housed in a compact energy package deal to enhance reliability, scale back materials prices, and facilitate circuit structure.
Superior Design and Configuration
The brand new MasterGaN gadgets characteristic two GaN HEMTs in a half-bridge configuration, ultimate for creating switched-mode energy provides, adapters, and chargers. These gadgets are appropriate for varied converter topologies together with active-clamp flyback, ahead, and resonant converters. They’re additionally pin appropriate with their predecessors, MasterGaN1 and MasterGaN4, however supply an optimized turn-on delay for larger frequency and effectivity, significantly in resonant topologies.
Versatile Enter and Shutdown Options
MasterGaN1L and MasterGaN4L settle for sign voltages starting from 3.3V to 15V and embrace hysteresis and pull-down options for direct connection to regulate gadgets like microcontrollers or DSPs. A devoted shutdown pin permits for efficient energy saving. The gadgets guarantee matched timing between the 2 GaN HEMTs, incorporating an interlocking circuit to forestall cross-conduction.
Specifics of MasterGaN1L and MasterGaN4L HEMTs
The MasterGaN1L HEMTs, with 150mΩ RDS(on) and a 10A rated present, are designed for purposes as much as 500W. They devour solely 20mW in no-load energy, aiding in assembly trade requirements for standby energy and common effectivity. The MasterGaN4L HEMTs, focusing on as much as 200W purposes, have a 225mΩ RDS(on) and a 6.5A rated present.
Demonstration Boards for Simple Analysis
STMicroelectronics supplies the EVLMG1LPBRDR1 and EVLMG4LPWRBR1 demonstration boards to guage every system’s options. These boards, containing a GaN-based half-bridge energy module, are fine-tuned for LLC purposes. They facilitate the creation of latest topologies utilizing MasterGaN1L and MasterGaN4L with out requiring a whole PCB design.
Availability and Pricing
Each the MasterGaN1L and MasterGaN4L are at present in manufacturing, obtainable in a 9mm x 9mm x 1mm GQFN package deal. The MasterGaN1L is priced from $4.40, and the MasterGaN4L begins at $3.78.
With the introduction of MasterGaN1L and MasterGaN4L, STMicroelectronics continues to guide within the discipline of energy provide design. These gadgets supply cutting-edge options for designers and engineers, aligning with fashionable ecodesign requirements and effectivity necessities.
